Two-dimensional thermal modeling of power monolithic microwave integrated circuits (MMICs)

Author

Fan, Mark S. ; Christou, Aris ; Pecht, Michael G.

Volume

39

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

1075

Lastpage

1079

Abstract

Numerical simulations of the two-dimensional temperature distribution for a typical GaAs MMIC circuit were conducted in order to understand the heat conduction process of the circuit chip and to provide temperature information for device reliability analysis. The method used is to solve the two-dimensional heat conduction equation with a control-volume-based finite difference scheme. In particular, the effects of the power dissipation and the ambient temperature are examined, and the criterion for the worst operating environment is discussed in terms of the allowed highest device junction temperature

Keywords

III-V semiconductors; MMIC; cooling; field effect integrated circuits; gallium arsenide; power integrated circuits; 2D modelling; 2D thermal modelling; GaAs; allowed highest device junction temperature; ambient temperature; device reliability analysis; finite difference scheme; heat conduction process; monolithic microwave integrated circuits; power MMICs; power dissipation; semiconductors; temperature information; two-dimensional heat conduction equation; two-dimensional temperature distribution; worst case; worst operating environment; Circuits; Difference equations; Electromagnetic heating; Gallium arsenide; Information analysis; MMICs; Microwave devices; Numerical simulation; Temperature control; Temperature distribution;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.129085

Filename

129085