Title :
Simple empirical relationship between mobility and carrier concentration
Author_Institution :
Royal Radar Establishment, St. Andrews Road, Great Malvern, UK
Abstract :
Analysis of experimental data shows that a simple relationship connects the electron mobility with the donor concentration ND. At room temperature, the mobility is inversely proportional to 1+¿(ND/1017) for a number of important semiconductors.
Keywords :
carrier mobility; impurity electron states and effects; semiconductors; donor concentration; electron mobility; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740205
