• DocumentCode
    965583
  • Title

    The Electronic Structure and Transmission Characteristics of Disordered AlGaAs Nanowires

  • Author

    Boykin, Timothy B. ; Luisier, Mathieu ; Schenk, Andreas ; Kharche, Neerav ; Klimeck, Gerhard

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Alabama Univ., Huntsville, AL
  • Volume
    6
  • Issue
    1
  • fYear
    2007
  • Firstpage
    43
  • Lastpage
    47
  • Abstract
    Perfect nanowires may be studied from both the bandstructure and transmission perspectives, and relating features in one set of curves to those in another often yields much insight into their behavior. For random-alloy nanowires, however, only transmission characteristics and virtual-crystal approximation (VCA) bands have been available. This is a serious shortcoming since the VCA cannot properly capture disorder at the primitive cell level: those bulk properties which it can satisfactorily reproduce arise from spatially extended states and measurements which average out primitive cell-level fluctuations. Here we address this deficiency by projecting approximate bands out of supercell states for Al0.15Ga0.85As random alloy nanowires. The resulting bands correspond to the transmission characteristics very closely, unlike the VCA bands, which cannot explain important transmission features. Using both bandstructure and transmission results, we are better able to explain the operation of these nanowires
  • Keywords
    III-V semiconductors; aluminium compounds; band structure; electronic structure; gallium arsenide; nanowires; semiconductor quantum wires; AlGaAs; band-structure; capture disorder; disordered semiconductor nanowires; electronic structure; primitive cell-level fluctuations; quantum wires; random-alloy nanowires; spatially extended states; supercell states; transmission characteristics; virtual-crystal approximation bands; Aluminum alloys; Computer networks; Fluctuations; Gallium alloys; Intelligent networks; Laboratories; Nanostructures; Nanotechnology; Nanowires; Propulsion; Nanotechnology; quantum effect semiconductor devices; quantum wires;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2006.886776
  • Filename
    4063321