DocumentCode
965616
Title
New surface-controlled negative-impedance transistor
Author
Haythornthwaite, R.F. ; Thomas, R.E.
Author_Institution
Communications Research Centre, Ottawa, Canada
Volume
10
Issue
14
fYear
1974
Firstpage
273
Lastpage
274
Abstract
A new negative-impedance transistor is reported, consisting of a bipolar transistor with a gate electrode on the oxide above the emitter-base junction, and tied to the collector of the transistor. The negative-impedance effect is attributed to an increase in the base surface recombination as the collector-emitter voltage is increased.
Keywords
bipolar transistors; negative resistance; base surface recombination; bipolar transistors; negative resistance;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19740217
Filename
4245180
Link To Document