Title :
New surface-controlled negative-impedance transistor
Author :
Haythornthwaite, R.F. ; Thomas, R.E.
Author_Institution :
Communications Research Centre, Ottawa, Canada
Abstract :
A new negative-impedance transistor is reported, consisting of a bipolar transistor with a gate electrode on the oxide above the emitter-base junction, and tied to the collector of the transistor. The negative-impedance effect is attributed to an increase in the base surface recombination as the collector-emitter voltage is increased.
Keywords :
bipolar transistors; negative resistance; base surface recombination; bipolar transistors; negative resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740217
