Title :
Effect of leakage current on the power output of s band TRAPATT oscillators
Author :
Borrego, J.M. ; Gutmann, R.J. ; Geipel, H.J.
Author_Institution :
Rensselaer Polytechnic Institute, Electrophysics & Electronic Engineering Division, Troy, USA
Abstract :
The effect of externally enhanced leakage current on S band TRAPATT diodes is reported. Without enhanced leakage, the TRAPATT has an effective leakage current density of the order of 0·4 A/cm2. Calculations indicate that the leakage current due to carrier storage provides the electron density for initiating the avalanche process.
Keywords :
avalanche diodes; leakage currents; microwave oscillators; solid-state microwave circuits; transit time devices; S-band; TRAPATT devices; avalanche diodes; leakage current effect; leakage currents; solid state microwave oscillators; transit time devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740220
