Novel degradation effects in dynamically stressed p-channel MOSFETs

The hot carrier degradation of p-channel MOS transistors under dynamic operation modes is studied. Dynamic degradation of submicrometer transistors is compared with the results of conventional static stressing. The application of inverter-like waveforms to the devices under test allows the identification of anomalous degradation modes, which are not consistent with the usually reported hot-carrier-induced punch-through in p-channel transistors. A simple model for the interpretation of the observed effects is presented. The implications of the experimental results for a correct characterization of hot-carrier damage and device lifetime prediction are discussed