Title :
Study of hole miniband transport in GexSi1-x/Si superlattice
Author :
Karunasiri, R.P.G. ; Park, Joon S. ; Wang, K.L.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fDate :
11/1/1989 12:00:00 AM
Abstract :
Summary form only given. The authors report the observation of hole-miniband transport in symmetrically strained GexSi1-x/Si superlattices. Two different kinds of superlattice sample were grown and fabricated. The first kind of sample consists of a single superlattice layer grown on an unstrained Gex2/ Si1-x2//Si buffer layer. The second kind of sample is called BAS (band aligned superlattice) and consists of two superlattices having different minibands. Mesa diodes of 50-100 mu m in diameter were fabricated for electrical measurement. For the simple superlattice sample, current voltage (I-V) characteristics for forward and reverse biases are almost symmetric. For the BAS sample, asymmetric I-V characteristics similar to those of a p-n junction are observed. The use of GexSi1-x/Si superlattices for device applications in infrared detectors and infrared sources using optical transitions between minibands is suggested.
Keywords :
Ge-Si alloys; semiconductor superlattices; silicon; 50 to 100 micron; BAS; GexSi1-x-Si; I-V characteristics; band aligned superlattice; buffer layer; hole miniband transport; symmetrically strained superlattices; Bipolar transistors; Buffer layers; Degradation; Diodes; Doping profiles; Electric variables measurement; Electron optics; Infrared detectors; Microstructure; Optical buffering; Optical devices; Optical superlattices; P-n junctions; Semiconductor superlattices; Tunneling; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
