• DocumentCode
    965873
  • Title

    Indium-phosphide c.w. transferred-electron amplifiers

  • Author

    Corlett, R.M. ; Griffith, I. ; Purcell, J.J.

  • Author_Institution
    Plessey Co., Allen Clark Research Centre, Towcester, UK
  • Volume
    10
  • Issue
    15
  • fYear
    1974
  • Firstpage
    307
  • Lastpage
    308
  • Abstract
    J band c.w. low-noise indium-phosphide reflection amplifiers are described. An integral-heatsink technology has resulted in devices that can be operated c.w. at high bias levels. C.W. noise figures as low as 10.7 dB have been obtained at 14 GHz, and voltage-gain-bandwidth products of 3.1 GHz have been obtained. Measurements of impedance, noise and the temperature sensitivity of the gain are presented.
  • Keywords
    microwave amplifiers; solid-state microwave devices; transferred electron devices; 14 GHz; InP; J-band; gain; impedance; integral heatsink technology; microwave amplifiers; noise; solid state microwave devices; temperature sensitivity; transferred electron devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740243
  • Filename
    4245207
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=965873