Modeling of output snapback characteristics in n-channel SOI MOSFETs

Author

Huang, J.S.T. ; Chen, H.J. ; Kueng, Jeffrey S.

Author_Institution

Honeywell Inc., Plymouth, MN, USA

Volume

39

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

1170

Lastpage

1178

Abstract

The snapback effect is usually observed in the output characteristics of an n-channel SOI MOSFET with zero gate voltage in which the drain-to-source breakdown voltage is less than the drain-to-body avalanche voltage. It can be attributed to parasitic lateral bipolar actions as well as the MOS feedback mode of operation-a point often overlooked in the literature. An analytical model is developed for predicting the observed output characteristics taking into account both the bipolar and the MOS mechanisms. Results obtained from this model agree well with the experimental I-V curves, and show that, with continuing scaling of device geometries and improvement in SOI materials, the bipolar-induced snapback will become dominant in the future

Keywords

insulated gate field effect transistors; semiconductor device models; MOS feedback mode of operation; analytical model; bipolar-induced snapback; continuing scaling; drain-to-body avalanche voltage; drain-to-source breakdown voltage; experimental I-V curves; modeling; n-channel SOI MOSFET; output characteristics; output snapback characteristics; parasitic bipolar transistors; parasitic lateral bipolar actions; snapback effect; zero gate voltage; Analytical models; Breakdown voltage; Feedback; Geometry; Helium; Hysteresis; Inverters; MOS devices; MOSFETs; Solid modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.129099

Filename

129099