Title :
Approximations to Fermi-Dirac integrals and their use in device analysis
Author :
Selvakumar, C.R.
Author_Institution :
Indian Institute of Technology, Madras, India
fDate :
5/1/1982 12:00:00 AM
Abstract :
A simple,single-expression approximation is derived for the Fermi-Dirac (F-D) Integral F1/2(x) in the range -4 ≤ x ≤ +12. This approximation is more accurate (less than 1-percent error throughout) and more useful in device analysis and computer modeling. The approximation procedure is general and can be used to find approximations for F-D Integrals of any order and to any arbitrary degree of accuracy.
Keywords :
Charge carrier density; Chromium; Diffusion processes; Electron devices; Equations; Instruments; Notice of Violation; Numerical analysis; Semiconductor devices; Semiconductor impurities;
Journal_Title :
Proceedings of the IEEE
DOI :
10.1109/PROC.1982.12337
