Title :
Numerical analysis of alpha-particle-induced soft errors in SOI MOS devices
Author :
Iwata, Hideyuki ; Ohzone, Takashi
Author_Institution :
Dept. of Electron. & Inf., Toyama Prefectural Univ., Japan
fDate :
5/1/1992 12:00:00 AM
Abstract :
Alpha-particle-induced soft errors in SOI MOSFETs are examined using a three-dimensional device simulation. A bipolar mechanism induced by the alpha-particle incidence is investigated in detail when an alpha particle penetrates from the drain region toward the source region. In SOI MOSFETs, the drain collected and source injected charges are mainly due to a bipolar mechanism. The bipolar mechanism in SOI MOSFETs is quite different from that which has been so far reported in bulk MOSFETs, and operates with a very small current of less than 1 nA for a very long time of 1 ns to 100 ms. The drain collected and source injected charges are strongly dependent on various device parameters and lifetimes. The results suggest that the bipolar mechanism is a significant cause of soft errors in SOI MOSFETs
Keywords :
alpha-particle effects; alpha-particles; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; 1 nA; 1 ns to 100 ms; SOI MOS devices; SOI MOSFETs; alpha-particle incidence; alpha-particle-induced soft errors; bipolar mechanism; drain collected charges; numerical analysis; source injected charges; three-dimensional device simulation; Alpha particles; Charge carrier processes; Error analysis; MOS devices; Numerical analysis; Numerical simulation; Poisson equations; Predictive models; Silicon on insulator technology; Very large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
