New carrier lifetime measurement method for fully depleted SOI MOSFET´s

Author

Yasuda, Naoki ; Taniguchi, Kenji ; Hamaguchi, Chihiro ; Yamaguchi, Yasuo ; Nishimura, Tadashi

Author_Institution

Dept. of Electron. Eng., Osaka Univ., Japan

Volume

39

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

1197

Lastpage

1202

Abstract

A carrier lifetime measurement method for fully depleted SOI MOSFETs is proposed. Generation and recombination lifetimes are evaluated from transient drain current characteristics after applying a step voltage to the substrate and after the optical generation of electron-hole pairs, respectively. Using the drain current characteristics, transient behavior of inversion charge density, accumulation charge density, and electric field in the SOI layer are analyzed to obtain the carrier lifetime. The validity of the method is demonstrated by experiments using SIMOX SOI MOSFETs

Keywords

carrier lifetime; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; time measurement; SIMOX SOI MOSFETs; SOI layer; accumulation charge density; carrier lifetime measurement method; electric field; fully depleted SOI MOSFETs; generation lifetime; inversion charge density; optical generation of electron-hole pairs; recombination lifetimes; step voltage; transient behavior; transient drain current characteristics; Atomic measurements; Character generation; Charge carrier lifetime; Current measurement; Lifetime estimation; MOSFET circuits; Optical films; Spontaneous emission; Transient analysis; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.129103

Filename

129103