Title :
Analysis of time-dependent white defects in PSID imagers
Author :
Koya, Yoshihito ; Matsunaga, Yoshiyuki
Author_Institution :
Toshiba Corp., Kawasaki, Japan
fDate :
5/1/1992 12:00:00 AM
Abstract :
A novel white defect phenomenon, time-dependent white defect (TDWD), exclusively observed in 2-million-pixel photoconductive-layered solid-state image sensors has been studied. Experimental results and analytical models show that TDWDs are caused by Fowler-Nordheim injection of electrons through the oxide under the taper-etched cathode interface regions in vertical CCD registers
Keywords :
CCD image sensors; VLSI; semiconductor device models; 2 Mpixel; Fowler Nordheim tunnelling; Fowler-Nordheim injection of electrons; PSID imagers; TDWD; VLSI; analytical models; experimental results; fluctuating white defects; photoconductive-layered solid-state image sensors; taper-etched cathode interface regions; time-dependent white defects; vertical CCD registers; white defect phenomenon; Cathodes; Charge coupled devices; Displays; Electrodes; HDTV; High-resolution imaging; Image analysis; Image sensors; Solid state circuits; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
