Title :
MOS small-signal conductances in the weak avalanche multiplication region
Author :
Cserveny, Stefan
Author_Institution :
Swiss Center for Electron. & Microtechnol., Neuchatel, Switzerland
fDate :
5/1/1992 12:00:00 AM
Abstract :
Experimental results on MOS small-signal conductances in the weak avalanche multiplication region are presented. The increase in the channel current due to the bulk effect produced by the voltage drop in the substrate has been considered and included in a simple model for the output conductance. Changes in the other small-signal conductances, such as the transconductance overshoot, have also been investigated
Keywords :
insulated gate field effect transistors; semiconductor device models; MOS small-signal conductances; bulk effect; channel current; model; output conductance; transconductance overshoot; voltage drop; weak avalanche multiplication region; Avalanche breakdown; Breakdown voltage; CMOS technology; Circuits; Impact ionization; Implants; MOSFETs; Monitoring; Transconductance; Transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
