DocumentCode
966007
Title
MOS small-signal conductances in the weak avalanche multiplication region
Author
Cserveny, Stefan
Author_Institution
Swiss Center for Electron. & Microtechnol., Neuchatel, Switzerland
Volume
39
Issue
5
fYear
1992
fDate
5/1/1992 12:00:00 AM
Firstpage
1233
Lastpage
1235
Abstract
Experimental results on MOS small-signal conductances in the weak avalanche multiplication region are presented. The increase in the channel current due to the bulk effect produced by the voltage drop in the substrate has been considered and included in a simple model for the output conductance. Changes in the other small-signal conductances, such as the transconductance overshoot, have also been investigated
Keywords
insulated gate field effect transistors; semiconductor device models; MOS small-signal conductances; bulk effect; channel current; model; output conductance; transconductance overshoot; voltage drop; weak avalanche multiplication region; Avalanche breakdown; Breakdown voltage; CMOS technology; Circuits; Impact ionization; Implants; MOSFETs; Monitoring; Transconductance; Transistors;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.129110
Filename
129110
Link To Document