Title :
Effects of arsenic n+ contact implants on memory switching in vertical polycrystalline silicon resistors
Author_Institution :
Dept. of Electr. Eng., Hawaii Univ., Honolulu, HI, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
The effects of arsenic implants, which form the lower and the upper n+ contact regions of the vertical polycrystalline silicon resistor, on memory switching have been investigated. It is shown that switching in devices without the lower n+ contact is initiated due to Joule heating, whereas in devices without the upper n+ contact, it is electronic in nature. These resistors are suitable for applications in high density `fuse-programmable´ memory technology
Keywords :
PROM; arsenic; elemental semiconductors; integrated memory circuits; ion implantation; resistors; silicon; Si:As; fuse programmable memory technology; lower n+ contact; memory switching; polycrystalline Si resistors; upper n+ contact regions; vertical polysilicon resistors; Degradation; Electron devices; Implants; MOSFET circuits; Resistors; Shape; Silicon; Transconductance; Virtual colonoscopy; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
