Title :
Ohmic contact formation on GaAs layers with low-temperature molecular-beam epitaxial caps
Author :
Look, D.C. ; Yamamoto, H. ; Nakano, K.
Author_Institution :
Univ. Res. Center, Wright State Univ., Dayton, OH, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
Molecular-beam epitaxial GaAs layers, grown at 200 or 400°C, show great promise as passivating or insulating films on top of standard n-type MESFET layers (n≃1.6×1017 cm-3) grown at normal temperatures (580-600°C). It is shown that ohmic contacts, with specific contact resistances of 10-6 Ω-cm2, can easily be fabricated without removing the cap layers. Preliminary results on capped p-type MESFET layers (p=1.5×1017 cm-3) suggest that a 200°C cap may degrade the contact resistance by a factor of 3-10
Keywords :
III-V semiconductors; contact resistance; gallium arsenide; molecular beam epitaxial growth; ohmic contacts; passivation; semiconductor epitaxial layers; 200 to 600 C; GaAs layers; MBE; MESFET layers; insulating films; low-temperature molecular-beam epitaxial caps; ohmic contact formation; ohmic contacts; passivating films; semiconductors; specific contact resistances; Gallium arsenide; Grain boundaries; Heating; Implants; Molecular beam epitaxial growth; Ohmic contacts; Resistors; Semiconductor films; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
