Title :
Collector optimization for high-speed bipolar transistors
Author :
Weng, J. ; Ehinger, K. ; Meister, T.F.
Author_Institution :
Siemens AG, Munich, Germany
fDate :
5/1/1992 12:00:00 AM
Abstract :
An efficient optimization procedure to improve the AC performance of integrated bipolar transistors is presented. Using the same emitter and base doping profiles, a reduction of the forward transit time T f and thus a considerable improvement in the transit frequency fT (more than 33% in the peak value) are achieved by optimizing the collector dopant profile
Keywords :
bipolar transistors; doping profiles; optimisation; semiconductor device models; solid-state microwave devices; AC performance; base doping profiles; collector dopant profile; emitter doping profile; forward transit time; integrated bipolar transistors; modelling; optimization procedure; transit frequency; Bipolar transistors; Circuit synthesis; Current density; Doping profiles; Frequency; Optical wavelength conversion; Permittivity; Region 7; Research and development; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
