• DocumentCode
    966040
  • Title

    Collector optimization for high-speed bipolar transistors

  • Author

    Weng, J. ; Ehinger, K. ; Meister, T.F.

  • Author_Institution
    Siemens AG, Munich, Germany
  • Volume
    39
  • Issue
    5
  • fYear
    1992
  • fDate
    5/1/1992 12:00:00 AM
  • Firstpage
    1240
  • Lastpage
    1242
  • Abstract
    An efficient optimization procedure to improve the AC performance of integrated bipolar transistors is presented. Using the same emitter and base doping profiles, a reduction of the forward transit time T f and thus a considerable improvement in the transit frequency fT (more than 33% in the peak value) are achieved by optimizing the collector dopant profile
  • Keywords
    bipolar transistors; doping profiles; optimisation; semiconductor device models; solid-state microwave devices; AC performance; base doping profiles; collector dopant profile; emitter doping profile; forward transit time; integrated bipolar transistors; modelling; optimization procedure; transit frequency; Bipolar transistors; Circuit synthesis; Current density; Doping profiles; Frequency; Optical wavelength conversion; Permittivity; Region 7; Research and development; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.129113
  • Filename
    129113
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966040