Title :
Role of radiation damage on the contact resistance of GaAs Schottky barriers
Author :
Taylor, P.D. ; Morgan, D.V.
Author_Institution :
University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
Abstract :
The effects of radiation damage on the current/voltage characteristics of Ni-GaAs Schottky barriers are studied. Boron ions implanted into the semiconductor are shown to reduce the device contact resistance. The nature of the defect levels so introduced are studied by thermally stimulated current and capacitance measurements.
Keywords :
Schottky effect; contact resistance; radiation effects; semiconductor-metal boundaries; B; GaAs Schottky barriers; Ni-GaAs; Schottky effect; contact resistance; current/voltage characteristics; radiation damage; radiation effects; semiconductor metal boundaries;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740341
