• DocumentCode
    966059
  • Title

    Role of radiation damage on the contact resistance of GaAs Schottky barriers

  • Author

    Taylor, P.D. ; Morgan, D.V.

  • Author_Institution
    University of Leeds, Department of Electrical & Electronic Engineering, Leeds, UK
  • Volume
    10
  • Issue
    21
  • fYear
    1974
  • Firstpage
    428
  • Lastpage
    429
  • Abstract
    The effects of radiation damage on the current/voltage characteristics of Ni-GaAs Schottky barriers are studied. Boron ions implanted into the semiconductor are shown to reduce the device contact resistance. The nature of the defect levels so introduced are studied by thermally stimulated current and capacitance measurements.
  • Keywords
    Schottky effect; contact resistance; radiation effects; semiconductor-metal boundaries; B; GaAs Schottky barriers; Ni-GaAs; Schottky effect; contact resistance; current/voltage characteristics; radiation damage; radiation effects; semiconductor metal boundaries;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740341
  • Filename
    4245227
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966059