• DocumentCode
    966061
  • Title

    Potential and field distributions in LDD structures in the subthreshold region

  • Author

    Huang, J.S.T. ; Kueng, Jeffrey S.

  • Author_Institution
    Honeywell Inc., Plymouth, MN, USA
  • Volume
    39
  • Issue
    5
  • fYear
    1992
  • fDate
    5/1/1992 12:00:00 AM
  • Firstpage
    1245
  • Lastpage
    1246
  • Abstract
    An analytical model for the potential and the field distributions in LDD MOSFET structures operating in the subthreshold region is developed by solving the quasi-two-dimensional Poisson equations. The model includes the effect of the gate voltage, but ignores the mobile charge density. The result is useful for predicting the incipient breakdown in lateral power MOSFETs that are designed to block high voltages when off
  • Keywords
    insulated gate field effect transistors; power transistors; semiconductor device models; LDD MOSFET structures; LDD structures; analytical model; breakdown voltage; field distributions; gate voltage; high voltage blocking; incipient breakdown; lateral power MOSFETs; potential distribution; quasi-two-dimensional Poisson equations; subthreshold region; Analytical models; Boundary conditions; Breakdown voltage; Channel bank filters; Equations; MOSFET circuits; Power MOSFET; Solid state circuits; Virtual reality;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.129115
  • Filename
    129115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966061