Title :
Potential and field distributions in LDD structures in the subthreshold region
Author :
Huang, J.S.T. ; Kueng, Jeffrey S.
Author_Institution :
Honeywell Inc., Plymouth, MN, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
An analytical model for the potential and the field distributions in LDD MOSFET structures operating in the subthreshold region is developed by solving the quasi-two-dimensional Poisson equations. The model includes the effect of the gate voltage, but ignores the mobile charge density. The result is useful for predicting the incipient breakdown in lateral power MOSFETs that are designed to block high voltages when off
Keywords :
insulated gate field effect transistors; power transistors; semiconductor device models; LDD MOSFET structures; LDD structures; analytical model; breakdown voltage; field distributions; gate voltage; high voltage blocking; incipient breakdown; lateral power MOSFETs; potential distribution; quasi-two-dimensional Poisson equations; subthreshold region; Analytical models; Boundary conditions; Breakdown voltage; Channel bank filters; Equations; MOSFET circuits; Power MOSFET; Solid state circuits; Virtual reality;
Journal_Title :
Electron Devices, IEEE Transactions on
