Title :
A semi-empirical model of the MOSFET´s small-signal drain conductance in saturation for analog circuit design
Author_Institution :
Dept. of Electr. Eng., Brown Univ., Providence, RI, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
A semiempirical model for the incremental drain conductance g d of the long-channel MOSFET in saturation which is useful for hand analysis of MOS amplifiers is presented. The model´s accuracy is higher than that of current commercial simulators and comparable to the parameter spread observed in current VLSI processes. Important modeling errors in the standard SPICE model for gd are pointed out
Keywords :
insulated gate field effect transistors; semiconductor device models; MOS amplifiers; analog circuit design; hand analysis; incremental drain conductance; long-channel MOSFET; modeling errors; saturation; semiempirical model; small-signal drain conductance; standard SPICE model; Circuit simulation; Doping; Integrated circuit modeling; MOSFET circuits; Neodymium; P-n junctions; Poisson equations; SPICE; Very large scale integration; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
