• DocumentCode
    966072
  • Title

    A semi-empirical model of the MOSFET´s small-signal drain conductance in saturation for analog circuit design

  • Author

    Shoucair, F.S.

  • Author_Institution
    Dept. of Electr. Eng., Brown Univ., Providence, RI, USA
  • Volume
    39
  • Issue
    5
  • fYear
    1992
  • fDate
    5/1/1992 12:00:00 AM
  • Firstpage
    1246
  • Lastpage
    1248
  • Abstract
    A semiempirical model for the incremental drain conductance g d of the long-channel MOSFET in saturation which is useful for hand analysis of MOS amplifiers is presented. The model´s accuracy is higher than that of current commercial simulators and comparable to the parameter spread observed in current VLSI processes. Important modeling errors in the standard SPICE model for gd are pointed out
  • Keywords
    insulated gate field effect transistors; semiconductor device models; MOS amplifiers; analog circuit design; hand analysis; incremental drain conductance; long-channel MOSFET; modeling errors; saturation; semiempirical model; small-signal drain conductance; standard SPICE model; Circuit simulation; Doping; Integrated circuit modeling; MOSFET circuits; Neodymium; P-n junctions; Poisson equations; SPICE; Very large scale integration; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.129116
  • Filename
    129116
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966072