Title :
Determination of junction temperature in AlGaAs/GaAs heterojunction bipolar transistors by electrical measurement
Author :
Waldrop, J.R. ; Wang, K.C. ; Asbeck, P.M.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
A method of measuring the junction temperature and associated thermal resistance of heterojunction bipolar transistors by using the temperature dependence of the DC gain is described
Keywords :
III-V semiconductors; aluminium compounds; gain measurement; gallium arsenide; heterojunction bipolar transistors; temperature measurement; AlGaAs-GaAs; DC gain temperature dependence; HBT; electrical measurement; heterojunction bipolar transistors; junction temperature measurement; semiconductors; thermal resistance; Electrical resistance measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; MOSFET circuits; Predictive models; SPICE; Temperature dependence; Temperature measurement; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
