• DocumentCode
    966102
  • Title

    Analysis for an electron source based on microchannel plate principles

  • Author

    Boulais, K.A. ; Choe, J.Y. ; Rhee, M.J.

  • Author_Institution
    US Naval Surface Warfare Center, Silver Spring, MD, USA
  • Volume
    39
  • Issue
    5
  • fYear
    1992
  • fDate
    5/1/1992 12:00:00 AM
  • Firstpage
    1250
  • Lastpage
    1252
  • Abstract
    An analysis is carried out for the channel output current density of a microchannel plate constructed from a crystalline semiconducting bulk. It is shown that the current density can be increased to the order of 1 A/cm2, which is several orders of magnitude higher than that of conventional microchannel plates, allowing its use for cold cathode applications
  • Keywords
    III-V semiconductors; cathodes; electron emission; electron multipliers; electron sources; gallium arsenide; semiconductor device models; GaAs; analysis; channel output current density; cold cathode applications; crystalline semiconducting bulk; electron source; microchannel plate; semiconductors; Electrical resistance measurement; Electron sources; Gallium arsenide; Microchannel; Power dissipation; Power measurement; Size measurement; Temperature measurement; Thermal conductivity; Thermal resistance;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.129118
  • Filename
    129118
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966102