Title :
Analysis for an electron source based on microchannel plate principles
Author :
Boulais, K.A. ; Choe, J.Y. ; Rhee, M.J.
Author_Institution :
US Naval Surface Warfare Center, Silver Spring, MD, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
An analysis is carried out for the channel output current density of a microchannel plate constructed from a crystalline semiconducting bulk. It is shown that the current density can be increased to the order of 1 A/cm2, which is several orders of magnitude higher than that of conventional microchannel plates, allowing its use for cold cathode applications
Keywords :
III-V semiconductors; cathodes; electron emission; electron multipliers; electron sources; gallium arsenide; semiconductor device models; GaAs; analysis; channel output current density; cold cathode applications; crystalline semiconducting bulk; electron source; microchannel plate; semiconductors; Electrical resistance measurement; Electron sources; Gallium arsenide; Microchannel; Power dissipation; Power measurement; Size measurement; Temperature measurement; Thermal conductivity; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
