Title :
Epitaxially grown double-drift silicon IMPATT diodes at 60 To 90 GHz
Author :
Howard, Ayanna M. ; Smith, Dante J. ; Purcell, J.J.
Author_Institution :
Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Towcester, UK
Abstract :
The characterisation of successively grown n- and p-type epitaxial layers suitable for double-drift 60-90 GHz oscillators is described. Microwave results are reported, and include 0.35 W with 9.2% efficiency at 70 GHz.
Keywords :
IMPATT diodes; epitaxial growth; microwave oscillators; semiconductor device manufacture; solid-state microwave circuits; 60 to 90 GHz; IMPATT diodes; epitaxial growth; semiconductor device manufacture; solid state microwave oscillators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740352
