Title :
Channel width effect on MOSFET breakdown
Author :
Fong, Y. ; Liang, G.C. ; Duzer, T. Van ; Hu, C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
5/1/1992 12:00:00 AM
Abstract :
Wide-channel MOSFETs have typically 10 to 30% lower breakdown voltages than narrow-width (W≈L) transistors and are less likely to exhibit clear snapback characteristics. These observations can be explained using a simplified model to determine the width dependence of the MOSFET substrate resistance. The normalized substrate current Isub/W required for source turn-on predicted by this model is found to decrease by an order of magnitude for wide-channel-width transistors in agreement with measured data. This results in the observed decrease in breakdown voltage for wide-channel MOSFETs
Keywords :
insulated gate field effect transistors; semiconductor device models; MOSFET breakdown; breakdown voltages; channel width effect; model; normalized substrate current; observations; snapback characteristics; source turn-on; substrate resistance; wide-channel MOSFETs; wide-channel-width transistors; width dependence; Bipolar transistors; Breakdown voltage; Current measurement; EPROM; Electric breakdown; Feedback; Logic circuits; Logic programming; MOSFET circuits; Predictive models;
Journal_Title :
Electron Devices, IEEE Transactions on
