Channel width effect on MOSFET breakdown

Author

Fong, Y. ; Liang, G.C. ; Duzer, T. Van ; Hu, C.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

Volume

39

Issue

5

fYear

1992

fDate

5/1/1992 12:00:00 AM

Firstpage

1265

Lastpage

1267

Abstract

Wide-channel MOSFETs have typically 10 to 30% lower breakdown voltages than narrow-width (W≈L) transistors and are less likely to exhibit clear snapback characteristics. These observations can be explained using a simplified model to determine the width dependence of the MOSFET substrate resistance. The normalized substrate current I_sub/W required for source turn-on predicted by this model is found to decrease by an order of magnitude for wide-channel-width transistors in agreement with measured data. This results in the observed decrease in breakdown voltage for wide-channel MOSFETs

Keywords

insulated gate field effect transistors; semiconductor device models; MOSFET breakdown; breakdown voltages; channel width effect; model; normalized substrate current; observations; snapback characteristics; source turn-on; substrate resistance; wide-channel MOSFETs; wide-channel-width transistors; width dependence; Bipolar transistors; Breakdown voltage; Current measurement; EPROM; Electric breakdown; Feedback; Logic circuits; Logic programming; MOSFET circuits; Predictive models;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.129124

Filename

129124