Title :
Measurement of the effect of injected carriers on the p-n refractive-index step in single heterostructure diode lasers
Author :
Selway, P.R. ; Thompson, G.H.B. ; Henshall, G.D. ; Whiteaway, J.E.A.
Author_Institution :
Standard Telecommunication Laboratories Ltd., Harlow, UK
Abstract :
Far-field emission patterns of GaAs/GaxAl1-x As single heterostructure lasers have been measured over a range of temperature and threshold currents. The pattern width decreases as the threshold increases, which can be interpreted as a reduction of the p-n refractive-index step, owing to the effect of the injected carriers. A quantitative estimate of this effect has been obtained.
Keywords :
p-n heterojunctions; refractive index; semiconductor lasers; measurement of the effect of injected carriers; p-n refractive index step; single heterostructure diode lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740360
