Title :
Deeply Etched SiO2 Ridge Waveguide for Sharp Bends
Author :
Dai, Daoxin ; Shi, Yaocheng
Author_Institution :
Centre for Opt. & Electromagn. Res., Zhejiang Univ., Hangzhou
Abstract :
A deeply etched SiO2 ridge waveguide including the buffer, core, and cladding is presented for realizing sharp bends. The present SiO2 ridge waveguide has a strong confinement at the lateral direction, while it has a weak confinement at the vertical direction. Due to the strong confinement, a sharp bend (with a very small bending radius of about 10 mum) is obtained for an acceptable bending loss. A detailed analysis of the loss in a bent waveguide is given by using a finite-difference method. In order to reduce the transition loss, a narrow bending section with an optimal lateral offset is used. A low leakage loss is obtained by using wide straight waveguides, and linear tapers are used to connect the wide straight section and narrow bent sections
Keywords :
etching; finite difference methods; optical losses; optical waveguide theory; ridge waveguides; silicon compounds; waveguide discontinuities; SiO2; SiO2 ridge waveguide; bending loss; deep etching; finite-difference method; leakage loss; linear tapers; waveguide bends; Electromagnetic waveguides; Etching; Indium phosphide; Optical buffering; Optical fiber losses; Optical refraction; Optical scattering; Optical surface waves; Optical variables control; Optical waveguides; Bending; deep etching; ridge waveguide; silicon oxide;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2006.885243
