• DocumentCode
    966444
  • Title

    V-shaped notched-channel field-effect transistor

  • Author

    Mok, T.D. ; Salama, C.A.T.

  • Author_Institution
    University of Toronto, Department of Electrical Engineering, Toronto, Canada
  • Volume
    10
  • Issue
    23
  • fYear
    1974
  • Firstpage
    478
  • Lastpage
    480
  • Abstract
    A junction field-effect transistor with a V-shaped notched channel fabricated by preferential etching of (100) silicon is described. This transistor exhibits a higher maximum transconductance and a lower turn-on resistance than conventional silicon f.e.t.s. with rectangular channels. The fabrication, characteristics and possible applications of this device are described.
  • Keywords
    field effect transistors; V-shaped notched channel JFET; preferential etching; transconductance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740381
  • Filename
    4245269
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966444