Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers

Author

Colace, Lorenzo ; Assanto, Gaetano ; Fulgoni, Dom ; Nash, Lee

Author_Institution

Dept. of Electron. Eng., Univ. RomaTre, Rome

Volume

26

Issue

16

fYear

2008

Firstpage

2954

Lastpage

2959

Abstract

We investigate and characterize p-i-n near-infrared photodiodes fabricated in Ge-on-Si by reduced-pressure chemical vapor deposition, a technology compatible with silicon processing. The detectors exhibit remarkably low dark current densities of 1 mA/cm² at unity reverse bias and high responsivities of 200 mA/W at 1.55 mum. We evaluated their small-signal resistance, capacitance, and bandwidth as well as eye-diagrams at 2.5 and 10 Gbit/s .

Keywords

chemical vapour deposition; elemental semiconductors; germanium; infrared detectors; integrated optoelectronics; optical fabrication; p-i-n photodiodes; photodetectors; silicon; GeSi; dark current densities; near-infrared p-i-n Ge-on-Si photodiodes; reduced-pressure chemical vapor deposition; silicon integrated receivers; Bandwidth; Dark current; Detectors; High speed optical techniques; Integrated optics; Optical fiber communication; Optical network units; Optical receivers; PIN photodiodes; Silicon; Germanium; near infrared; optoelectronic devices; photodetectors; silicon optoelectronics;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/JLT.2008.925032

Filename

4660227