Title :
Near-Infrared p-i-n Ge-on-Si Photodiodes for Silicon Integrated Receivers
Author :
Colace, Lorenzo ; Assanto, Gaetano ; Fulgoni, Dom ; Nash, Lee
Author_Institution :
Dept. of Electron. Eng., Univ. RomaTre, Rome
Abstract :
We investigate and characterize p-i-n near-infrared photodiodes fabricated in Ge-on-Si by reduced-pressure chemical vapor deposition, a technology compatible with silicon processing. The detectors exhibit remarkably low dark current densities of 1 mA/cm2 at unity reverse bias and high responsivities of 200 mA/W at 1.55 mum. We evaluated their small-signal resistance, capacitance, and bandwidth as well as eye-diagrams at 2.5 and 10 Gbit/s .
Keywords :
chemical vapour deposition; elemental semiconductors; germanium; infrared detectors; integrated optoelectronics; optical fabrication; p-i-n photodiodes; photodetectors; silicon; GeSi; dark current densities; near-infrared p-i-n Ge-on-Si photodiodes; reduced-pressure chemical vapor deposition; silicon integrated receivers; Bandwidth; Dark current; Detectors; High speed optical techniques; Integrated optics; Optical fiber communication; Optical network units; Optical receivers; PIN photodiodes; Silicon; Germanium; near infrared; optoelectronic devices; photodetectors; silicon optoelectronics;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2008.925032
