Title :
Two-dimensional particle models in semiconductor-device analysis
Author :
Hockney, R.W. ; Warriner, R.A. ; Reiser, M.
Author_Institution :
University of Reading, Computer Science Department, Reading, UK
Abstract :
A microscopic-scattering particle model is described that combines a 2-dimensional spatial representation of the fields with a 2-band Monte Carlo description of the scattering events. A simplified scattering law produces a particle model for the diffusion approximation. Results are shown for Si and GaAs f.e.t.s and a GaAs diode.
Keywords :
Monte Carlo methods; carrier density; field effect transistors; semiconductor device models; semiconductor diodes; FET; GaAs diode; Monte Carlo description; Si; diffusion approximation; microscopic scattering particle model; semiconductor device models;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740386
