• DocumentCode
    966489
  • Title

    Two-dimensional particle models in semiconductor-device analysis

  • Author

    Hockney, R.W. ; Warriner, R.A. ; Reiser, M.

  • Author_Institution
    University of Reading, Computer Science Department, Reading, UK
  • Volume
    10
  • Issue
    23
  • fYear
    1974
  • Firstpage
    484
  • Lastpage
    486
  • Abstract
    A microscopic-scattering particle model is described that combines a 2-dimensional spatial representation of the fields with a 2-band Monte Carlo description of the scattering events. A simplified scattering law produces a particle model for the diffusion approximation. Results are shown for Si and GaAs f.e.t.s and a GaAs diode.
  • Keywords
    Monte Carlo methods; carrier density; field effect transistors; semiconductor device models; semiconductor diodes; FET; GaAs diode; Monte Carlo description; Si; diffusion approximation; microscopic scattering particle model; semiconductor device models;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740386
  • Filename
    4245274
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966489