Title :
Vertical m.o.s. transistor geometry for power amplification at gigahertz frequencies
Author :
Heng, T.M.S. ; Nathanson, H.C.
Author_Institution :
Westinghouse Research Laboratories, Pittsburgh, USA
Abstract :
A new vertical-channel silicon m.o.s.t.configuration has exhibited a high average current density (1000 A/cm2), a high periphery/output-area ratio (0.2 ¿m¿1), and a high-current capability (160 ¿A/¿m), consistent with high power-frequency performance. Experimental state-of-the-art results include 1.2 W r.f.at 0.7 GHz and a device fmax of 2.1 GHz.
Keywords :
field effect transistors; microwave amplifiers; power amplifiers; power transistors; solid-state microwave devices; microwave power amplifiers; vertical geometry MOSFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740390
