Title :
Normally-off m.e.s.f.e.t. with fast switching behaviour
Author_Institution :
RWTH Aachen, Institut fÿr Halbleitertechnik, Aachen, West Germany
Abstract :
Normally-off m.c.s.f.e.t.s, fabricated on an insulating GaAs substrate with a vapour-phase-grown double layer (n¿/n), showed a d.c. characteristic with a good saturation range and a switching response of 35 ps risetime.
Keywords :
field effect transistors; semiconductor switches; GaAs substrate; MESFET; fast switching;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740401
