• DocumentCode
    966673
  • Title

    High Speed and High Resolution ISO A4 Size Amorphous Si:H Contact Linear Image Sensor

  • Author

    Sakamoto, Mikio ; Okumura, Fujio ; Kajiwara, Yuji ; Uchida, Hiroyuki ; Kaneko, Setsuo

  • Author_Institution
    NEC Corporation, Kanagawa, Japan
  • Volume
    7
  • Issue
    4
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    429
  • Lastpage
    433
  • Abstract
    A contact linear image sensor has been developed as a new device to satisfy the requirement for facsimile equipment size reduction. An amorphous Si (a-Si:H) metal insulator semiconductor (MIS) photodiode, which has the excellent small dark current characteristics, is used as the photosensing element. In this sensor element the thermal stability of the electrode material was examined and optimum material was selected. For detecting signals stored in the photosensing elements, 64 bit/ chip integrated circuits (IC´s) with a new driving method, which achieves the low noise and high speed operation, were designed and developed. These IC´s are mounted on the sensor device substrate. International Standards Organization (ISO) A4 size 8 elements/mm and 12 elements/ mm sensor units in light-emitting diode (LED) light source have been developed. The sensor units characteristics in practical use give signal/ noise ratio (SNR) of 30 dB at 1.5-2.5 ms/line.
  • Keywords
    Amorphous semiconductor materials/devices; Image sensors; MIS devices; Amorphous materials; High speed integrated circuits; ISO; Image resolution; Image sensors; Integrated circuit noise; Light emitting diodes; Semiconductor device noise; Semiconductor materials; Sensor phenomena and characterization;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/TCHMT.1984.1136372
  • Filename
    1136372