DocumentCode
966673
Title
High Speed and High Resolution ISO A4 Size Amorphous Si:H Contact Linear Image Sensor
Author
Sakamoto, Mikio ; Okumura, Fujio ; Kajiwara, Yuji ; Uchida, Hiroyuki ; Kaneko, Setsuo
Author_Institution
NEC Corporation, Kanagawa, Japan
Volume
7
Issue
4
fYear
1984
fDate
12/1/1984 12:00:00 AM
Firstpage
429
Lastpage
433
Abstract
A contact linear image sensor has been developed as a new device to satisfy the requirement for facsimile equipment size reduction. An amorphous Si (a-Si:H) metal insulator semiconductor (MIS) photodiode, which has the excellent small dark current characteristics, is used as the photosensing element. In this sensor element the thermal stability of the electrode material was examined and optimum material was selected. For detecting signals stored in the photosensing elements, 64 bit/ chip integrated circuits (IC´s) with a new driving method, which achieves the low noise and high speed operation, were designed and developed. These IC´s are mounted on the sensor device substrate. International Standards Organization (ISO) A4 size 8 elements/mm and 12 elements/ mm sensor units in light-emitting diode (LED) light source have been developed. The sensor units characteristics in practical use give signal/ noise ratio (SNR) of 30 dB at 1.5-2.5 ms/line.
Keywords
Amorphous semiconductor materials/devices; Image sensors; MIS devices; Amorphous materials; High speed integrated circuits; ISO; Image resolution; Image sensors; Integrated circuit noise; Light emitting diodes; Semiconductor device noise; Semiconductor materials; Sensor phenomena and characterization;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/TCHMT.1984.1136372
Filename
1136372
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