• DocumentCode
    966713
  • Title

    Laser Polysilicon Link Making

  • Author

    Parker, Donald L. ; Lin, Fa-yong ; Zhang, Ding-Kanlg

  • Author_Institution
    Texas A&M Univ., College Station, TX
  • Volume
    7
  • Issue
    4
  • fYear
    1984
  • fDate
    12/1/1984 12:00:00 AM
  • Firstpage
    438
  • Lastpage
    442
  • Abstract
    Several laser polysilicon link-making structures have been fabricated and tested. Initial resistance of the laser targets were in the range 108 \\Omega to 5 x 109 \\Omega depending on the structure. The structures were serpentine raster scanned with Q-switched frequency doubled Nd:YAG (0.53µm) green laser radiation at various power levels. The size of the scan was 12.5 x 12.5 µm2. Link resistance after scanning at an appropriate power level was in the range 50 \\Omega to 500 \\Omega depending on link structure. All of the structures were tested for stability under subsequent high temperature thermal anneals. The results show that a) laser linkmaking targets can be compatible with conventional integrated circuit (IC) processing, b) that the link sizes can be scaled at least to 2 µm; and c) that the links can be closed with a single pulse of green laser radiation.
  • Keywords
    Laser applications, materials processing; Memory fault tolerance; Semiconductor memories; Annealing; Doping; Etching; Frequency; Implants; Optical pulses; Plasma applications; Pulse circuits; Pulsed laser deposition; Testing;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/TCHMT.1984.1136374
  • Filename
    1136374