DocumentCode :
966713
Title :
Laser Polysilicon Link Making
Author :
Parker, Donald L. ; Lin, Fa-yong ; Zhang, Ding-Kanlg
Author_Institution :
Texas A&M Univ., College Station, TX
Volume :
7
Issue :
4
fYear :
1984
fDate :
12/1/1984 12:00:00 AM
Firstpage :
438
Lastpage :
442
Abstract :
Several laser polysilicon link-making structures have been fabricated and tested. Initial resistance of the laser targets were in the range 108 \\Omega to 5 x 109 \\Omega depending on the structure. The structures were serpentine raster scanned with Q-switched frequency doubled Nd:YAG (0.53µm) green laser radiation at various power levels. The size of the scan was 12.5 x 12.5 µm2. Link resistance after scanning at an appropriate power level was in the range 50 \\Omega to 500 \\Omega depending on link structure. All of the structures were tested for stability under subsequent high temperature thermal anneals. The results show that a) laser linkmaking targets can be compatible with conventional integrated circuit (IC) processing, b) that the link sizes can be scaled at least to 2 µm; and c) that the links can be closed with a single pulse of green laser radiation.
Keywords :
Laser applications, materials processing; Memory fault tolerance; Semiconductor memories; Annealing; Doping; Etching; Frequency; Implants; Optical pulses; Plasma applications; Pulse circuits; Pulsed laser deposition; Testing;
fLanguage :
English
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
0148-6411
Type :
jour
DOI :
10.1109/TCHMT.1984.1136374
Filename :
1136374
Link To Document :
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