Electron-drift-velocity measurements in silicon at high temperatures and their empirical relation to electric field

The drift velocity of electrons in silicon has been measured over a wide range of electric fields (from 3×102 to 6×104 V/cm) at temperatures of up to 430 K. The experimental data have been fitted to a simple formula for the temperatures of interest. The mean-square deviation was, in all cases, less than 3·8%.