DocumentCode :
966911
Title :
Silicon IMPATT cascaded amplifier: 6 W (c.w.) at 9.6 GHz
Author :
Braddock, P.W. ; Hodges, R.D. ; Genner, R.
Author_Institution :
Royal Radar Establishment, Great Malvern, UK
Volume :
10
Issue :
25
fYear :
1974
Firstpage :
538
Lastpage :
540
Abstract :
A compact silicon IMPATT 4-stage coaxial amplifier has given 6.3 W (c.w.) with a power gain of 28 dB and an instantaneous bandwidth (¿1 dB) of 200 MHz centred at 9.6 GHz. A gain ripple of less than 0.2 dB and phase deviation from linearity of ±3° across a 30 MHz bandwidth slot was obtained at the full rated output power. The overall efficiency was 4.5%. Commercial devices and circulators were used throughout the unit and the power in the final stage was obtained by combining the available powers from four separate devices. Particular attention was paid to the circuits to reduce the onset of spurious oscillations under large-signal conditions.
Keywords :
IMPATT diodes; coupled circuits; microwave amplifiers; solid-state microwave circuits; Si IMPATT; bandwidth; cascaded amplifier; circulators; efficiency; gain ripple; large signal conditions; microwave amplifier; oscillations; output power; phase deviation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19740427
Filename :
4245317
Link To Document :
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