• DocumentCode
    966911
  • Title

    Silicon IMPATT cascaded amplifier: 6 W (c.w.) at 9.6 GHz

  • Author

    Braddock, P.W. ; Hodges, R.D. ; Genner, R.

  • Author_Institution
    Royal Radar Establishment, Great Malvern, UK
  • Volume
    10
  • Issue
    25
  • fYear
    1974
  • Firstpage
    538
  • Lastpage
    540
  • Abstract
    A compact silicon IMPATT 4-stage coaxial amplifier has given 6.3 W (c.w.) with a power gain of 28 dB and an instantaneous bandwidth (¿1 dB) of 200 MHz centred at 9.6 GHz. A gain ripple of less than 0.2 dB and phase deviation from linearity of ±3° across a 30 MHz bandwidth slot was obtained at the full rated output power. The overall efficiency was 4.5%. Commercial devices and circulators were used throughout the unit and the power in the final stage was obtained by combining the available powers from four separate devices. Particular attention was paid to the circuits to reduce the onset of spurious oscillations under large-signal conditions.
  • Keywords
    IMPATT diodes; coupled circuits; microwave amplifiers; solid-state microwave circuits; Si IMPATT; bandwidth; cascaded amplifier; circulators; efficiency; gain ripple; large signal conditions; microwave amplifier; oscillations; output power; phase deviation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19740427
  • Filename
    4245317