DocumentCode
966911
Title
Silicon IMPATT cascaded amplifier: 6 W (c.w.) at 9.6 GHz
Author
Braddock, P.W. ; Hodges, R.D. ; Genner, R.
Author_Institution
Royal Radar Establishment, Great Malvern, UK
Volume
10
Issue
25
fYear
1974
Firstpage
538
Lastpage
540
Abstract
A compact silicon IMPATT 4-stage coaxial amplifier has given 6.3 W (c.w.) with a power gain of 28 dB and an instantaneous bandwidth (¿1 dB) of 200 MHz centred at 9.6 GHz. A gain ripple of less than 0.2 dB and phase deviation from linearity of ±3° across a 30 MHz bandwidth slot was obtained at the full rated output power. The overall efficiency was 4.5%. Commercial devices and circulators were used throughout the unit and the power in the final stage was obtained by combining the available powers from four separate devices. Particular attention was paid to the circuits to reduce the onset of spurious oscillations under large-signal conditions.
Keywords
IMPATT diodes; coupled circuits; microwave amplifiers; solid-state microwave circuits; Si IMPATT; bandwidth; cascaded amplifier; circulators; efficiency; gain ripple; large signal conditions; microwave amplifier; oscillations; output power; phase deviation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19740427
Filename
4245317
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