Title :
Efficiency considerations of high-low- and low-high-low-doping GaAs IMPATT diodes
Author :
O´Hara, S. ; Grierson, J.R.
Author_Institution :
Post Office Research Department, Ipswich, UK
Abstract :
Large-signal computer simulations of high-low and low-high-low IMPATT-diode structures show that the high experimental efficiencies of such structures are not related to the avalanche-region voltage by the term (1 ¿ VAV/VDC) as predicted by simple theory. Other reasons are suggested for the high experimental efficiencies of such structures.
Keywords :
IMPATT diodes; electronics applications of computers; simulation; solid-state microwave devices; Fourier component; GaAs IMPATT diodes; avalanche region voltage; computer simulations; depletion region; efficiency; field profiles; large signal analysis; terminal particle current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19740429
