Title :
Microwave performance of low-power ion-implanted 0.25-micron gate GaAs MESFET for low-cost MMIC´s applications
Author :
Apostolakis, P.J. ; Middleton, J. ; Kruse, J. ; Scherrer, D. ; Barlage, D. ; Feng, M. ; Lepore, A.N.
Author_Institution :
Dept.of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Low-power microwave performance of an enhancement mode) (E-mode ion-implanted GaAs MESFET is reported. The 0.25- mu m*100- mu m E-MESFET has a threshold voltage of V/sub th/=0.0 V. At 1.0-mW operation of power with a bias condition of V/sub ds/=0.5 V and I/sub ds/-2 mA, a noise figure of 0.85 dB with an associated gain of 15 dB was measured at 4 GHz. These results demonstrate that the GaAs E-MESFET is an excellent choice for low-power personal communication applications.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; gallium arsenide; ion implantation; solid-state microwave devices; 0.25 micron; 0.5 V; 0.85 dB; 1 W; 15 dB; 2 mA; 4 GHz; E-mode; GaAs; MESFET; bias condition; enhancement mode; ion-implanted; low cost MMIC applications, SHF; low-power personal communication applications; Costs; Gain; Gallium arsenide; Intrusion detection; MESFETs; MMICs; Microelectronics; Microwave devices; Noise figure; Threshold voltage;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
