Title :
Mass-production-type GaAs IMPATT diodes in s.h.f. band
Author :
Miyazaki, Moriyasu ; Migitaka, M.
Author_Institution :
Hitachi Ltd., Central Research Laboratory, Kokubunji, Japan
Abstract :
The structure of mass-production-type GaAs IMPATT diodes is described. By making the diodes with a mesa structure embeded in polyimide resin, batch fabrication of small-area diodes has become possible over a large wafer area. Diodes so far obtained have almost the same characteristics as those of conventional GaAs IMPATT diodes.
Keywords :
IMPATT diodes; solid-state microwave devices; SHF band; large wafer area; mass production type GaAs IMPATT diodes; mesa structure; polyimide resin; small area diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750336
