• DocumentCode
    966967
  • Title

    Mass-production-type GaAs IMPATT diodes in s.h.f. band

  • Author

    Miyazaki, Moriyasu ; Migitaka, M.

  • Author_Institution
    Hitachi Ltd., Central Research Laboratory, Kokubunji, Japan
  • Volume
    11
  • Issue
    18
  • fYear
    1975
  • Firstpage
    437
  • Lastpage
    438
  • Abstract
    The structure of mass-production-type GaAs IMPATT diodes is described. By making the diodes with a mesa structure embeded in polyimide resin, batch fabrication of small-area diodes has become possible over a large wafer area. Diodes so far obtained have almost the same characteristics as those of conventional GaAs IMPATT diodes.
  • Keywords
    IMPATT diodes; solid-state microwave devices; SHF band; large wafer area; mass production type GaAs IMPATT diodes; mesa structure; polyimide resin; small area diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750336
  • Filename
    4245322
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=966967