High-efficient class F GaAs FET amplifiers operating with very low bias voltages for use in mobile telephones at 1.75 GHz

Author

Duvanaud, C. ; Dietsche, S. ; Pataut, G. ; Obregon, J.

Author_Institution

IRCOM, Limoges, France

Volume

3

Issue

8

fYear

1993

Firstpage

268

Lastpage

270

Abstract

High-efficiency class F GaAs power FET amplifiers working with a very low drain bias voltage of 3 V, for use in portable telephones, are reported. The transistor used has an optimized gate periphery of 2000 mm and a gate length of 0.7 mu m. Under class F operation with a drain voltage of 3 V, it has demonstrated an output power of 24.5 dBm with 71% of power-added efficiency at the operating frequency of 1.75 GHz. Output harmonic levels lower than -25 dBc have been measured. The results obtained present the state of the art as published for low-bias-voltage, low-power-consumption amplifiers for mobile telephone systems.<>

Keywords

III-V semiconductors; gallium arsenide; microwave amplifiers; power amplifiers; radiotelephony; solid-state microwave circuits; ultra-high-frequency amplifiers; 0.7 micron; 1.75 GHz; 3 V; 71 percent; FET amplifiers; GaAs; UHF; class F operation; low bias voltages; low-power-consumption; mobile telephones; portable telephones; Batteries; Degradation; FETs; Frequency; Gallium arsenide; High power amplifiers; Low voltage; Power amplifiers; Power generation; Telephony;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.242219

Filename

242219