Title :
A 2-GHZ three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifier
Author :
Rosenbaum, Steven E. ; Jelloian, Linda M. ; Larson, Lawrence E. ; Mishra, Umesh K. ; Pierson, Deborah A. ; Thompson, Mark S. ; Liu, Takyiu ; Brown, April S.
Author_Institution :
Hughes Res. Lab., Malibu, CA, USA
Abstract :
A three-stage monolithic microwave integrated circuit (MMIC) low-noise amplifier (LNA) has been fabricated using 0.15- mu m-gate-length, InP-based (AlInAs-GaInAs) high electron mobility transistor (HEMT) technology. The LNA exhibited less than 0.5-dB noise figure and greater than 35-dB gain from 2.25 to 2.5 GHz. The input and output return loss exceeded 15 dB across the band. The results are believed to be the best reported to date for a MMIC amplifier in this frequency range.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; ultra-high-frequency amplifiers; 0.15 micron; 0.5 dB; 15 dB; 2.25 to 2.5 GHz; 3.5 dB; AlInAs-GaInAs-InP; HEMT MMIC; LNA; UHF; high electron mobility transistor; low-noise amplifier; monolithic microwave integrated circuit; Frequency; HEMTs; Integrated circuit technology; Low-noise amplifiers; MMICs; MODFETs; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Noise figure;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
