Title :
An Output Buffer for 3.3-V Applications in a 0.13-
1/2.5-V CMOS Process
Author :
Chen, Shih-Lun ; Ker, Ming-Dou
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu
Abstract :
With a 3.3-V interface, such as PCI-X application, high-voltage overstress on the gate oxide is a serious reliability problem in designing I/O circuits by using only 1/2.5-V low-voltage devices in a 0.13-mum CMOS process. Thus, a new output buffer realized with low-voltage (1- and 2.5-V) devices to drive high-voltage signals for 3.3-V applications is proposed in this paper. The proposed output buffer has been fabricated in a 0.13-mum 1/2.5-V 1P8M CMOS process with Cu interconnects. The experimental results have confirmed that the proposed output buffer can be successfully operated at 133 MHz without suffering high-voltage gate-oxide overstress in the 3.3-V interface. In addition, a new level converter that is realized with only 1- and 2.5-V devices that can convert 0/1-V voltage swing to 1/3.3-V voltage swing is also presented in this paper. The experimental results have also confirmed that the proposed level converter can be operated correctly
Keywords :
CMOS integrated circuits; buffer circuits; convertors; integrated circuit design; integrated circuit reliability; 0.13 micron; 1 V; 133 MHz; 2.5 V; 3.3 V; CMOS process; Cu interconnects; PCI-X application; gate-oxide reliability; high-voltage gate-oxide overstress; level converter; output buffer; Breakdown voltage; CMOS process; Digital circuits; Energy consumption; Hot carrier effects; Integrated circuit interconnections; MOSFET circuits; Manufacturing processes; P-n junctions; Power supplies; Gate-oxide reliability; level converter; mixed-voltage I/O; output buffer;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2006.883202