• DocumentCode
    967020
  • Title

    Quasisaturation-region operation of n¿p¿n¿¿n power transistors

  • Author

    Gaur, S.P.

  • Author_Institution
    IBM, System Products Division, Poughkeepsie, USA
  • Volume
    11
  • Issue
    18
  • fYear
    1975
  • Firstpage
    446
  • Lastpage
    447
  • Abstract
    A 2-dimensional mathematical model is utilised to predict the internal behaviour of a typical n¿p¿n¿¿n power transistor operating under steady-state conditions. Results of the analysis for the quasisaturation-region operation indicate the extension of the base region in the n¿ collector and the presence of appreciable minority charge carriers in the inactive base region under the base contact.
  • Keywords
    minority carriers; power transistors; 2-dimensional mathematical model; inactive base region; minority charge carriers; n- collector; n-p-n--n power transistors; quasisaturation region operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19750343
  • Filename
    4245328
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=967020