Title :
Quasisaturation-region operation of n¿p¿n¿¿n power transistors
Author_Institution :
IBM, System Products Division, Poughkeepsie, USA
Abstract :
A 2-dimensional mathematical model is utilised to predict the internal behaviour of a typical n¿p¿n¿¿n power transistor operating under steady-state conditions. Results of the analysis for the quasisaturation-region operation indicate the extension of the base region in the n¿ collector and the presence of appreciable minority charge carriers in the inactive base region under the base contact.
Keywords :
minority carriers; power transistors; 2-dimensional mathematical model; inactive base region; minority charge carriers; n- collector; n-p-n--n power transistors; quasisaturation region operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19750343
