Title :
Highpower 0.15-mm V-band pseudomorphic InGaAs-AlGaAs-GaAs HEMT
Author :
Lai, R. ; Wojtowicz, M. ; Chen, C.H. ; Biedenbender, M. ; Yen, H.C. ; Streit, D.C. ; Tan, K.L. ; Liu, P.H.
Author_Institution :
TRW, Redondo Beach, CA, USA
Abstract :
The DC and RF power performance of double heterostructure pseudomorphic InGaAs-AlGaAs-GaAs HEMTs at V-band is reported. A 0.15-mm*400-mm device has demonstrated output power of 225 mW (0.55 W/mm) with 4.5-dB power gain and 25.4% power-added efficiency (PAE) at 60 GHz. A 0.15-mm*320-mm device demonstrated 31.1% PAE with 170-mW (0.53 W/mm) output power and 5.3-dB power gain. These data represent the highest reported combination of output power, power gain and power-added efficiency for a single device at V-band.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 0.15 mm; 170 mW; 225 mW; 25.4 percent; 31.1 percent; 320 mm; 4.5 dB; 400 mm; 5.3 dB; 60 GHz; DC performance; InGaAs-AlGaAs-GaAs; RF power performance; V-band; double heterostructure; high power device; output power; power gain; power-added efficiency; pseudomorphic HEMT; Current density; Cutoff frequency; Employment; Fabrication; Gain; HEMTs; Indium gallium arsenide; Plasma temperature; Power generation; Radio frequency;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
