DocumentCode
967178
Title
Two-dimensional MESFET-based spatial power combiners
Author
Balasurbramaniyan, A. ; Mortazawi, Amir
Author_Institution
Dept. of Electr. & Comput. Eng., Central Florida Univ., Orlando, FL, USA
Volume
3
Issue
10
fYear
1993
Firstpage
366
Lastpage
368
Abstract
A spatial power combining structure capable of integrating many three terminal devices into a two-dimensional structure is described. The combiners designed and fabricated using this structure do not suffer from multimoding problems. Effective isotropic radiated powers of 5.54 W and 17.38 W at 10.03 GHz were obtained from an eight- and a sixteen-MESFET combiner, respectively. These combiners are suitable for monolithic circuit implementation.<>
Keywords
Schottky gate field effect transistors; microstrip components; microwave integrated circuits; microwave oscillators; 10.03 GHz; 17.38 W; 5.54 W; MESFET-based; SHF; monolithic circuit implementation; spatial power combiners; three terminal devices; two-dimensional structure; Feedback circuits; Frequency; Integrated circuit interconnections; MESFETs; Microwave devices; Optical devices; Oscillators; Power combiners; Scattering parameters; Virtual manufacturing;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.242263
Filename
242263
Link To Document