• DocumentCode
    967215
  • Title

    The Effects of Temperature Cycling on Aluminum-Film Interconnections

  • Author

    Ghate, Prabhakar B. ; Blair, James C.

  • Author_Institution
    Texas Instr. Inc.
  • Volume
    7
  • Issue
    3
  • fYear
    1971
  • fDate
    9/1/1971 12:00:00 AM
  • Firstpage
    134
  • Lastpage
    138
  • Abstract
    Aluminum-thin-film interconnections crossing Si-SiO2steps were temperature cycled 1500 times from-55° to 150°C and the films in the vicinity of Si-SiO2steps have been examined using a scanning electron microscope. Grain boundary sliding, grooving, and the striations are observed. The observations indicate that the failure mechanisms due to fatigue in Al films are similar to the ones observed for bulk samples.
  • Keywords
    Aluminum; Annealing; Grain boundaries; Scanning electron microscopy; Semiconductor films; Silicon on insulator technology; Stress; Substrates; Temperature; Testing;
  • fLanguage
    English
  • Journal_Title
    Parts, Hybrids, and Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0361-1000
  • Type

    jour

  • DOI
    10.1109/TPHP.1971.1136424
  • Filename
    1136424
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=967215