Title :
The Effects of Temperature Cycling on Aluminum-Film Interconnections
Author :
Ghate, Prabhakar B. ; Blair, James C.
Author_Institution :
Texas Instr. Inc.
fDate :
9/1/1971 12:00:00 AM
Abstract :
Aluminum-thin-film interconnections crossing Si-SiO2steps were temperature cycled 1500 times from-55° to 150°C and the films in the vicinity of Si-SiO2steps have been examined using a scanning electron microscope. Grain boundary sliding, grooving, and the striations are observed. The observations indicate that the failure mechanisms due to fatigue in Al films are similar to the ones observed for bulk samples.
Keywords :
Aluminum; Annealing; Grain boundaries; Scanning electron microscopy; Semiconductor films; Silicon on insulator technology; Stress; Substrates; Temperature; Testing;
Journal_Title :
Parts, Hybrids, and Packaging, IEEE Transactions on
DOI :
10.1109/TPHP.1971.1136424
