Low power consumption InAlAs-InGaAs-InP HBT SPDT PIN diode X-band switch

Author

Kobayashi, K.W. ; Tran, L.T. ; Bui, S. ; Velebir, J.R. ; Oki, A.K. ; Streit, D.C.

Author_Institution

TRW, Redondo Beach, CA, USA

Volume

3

Issue

10

fYear

1993

Firstpage

384

Lastpage

386

Abstract

Results for the first monolithic single-pole, double-throw (SPDT) X-band PIN diode switch fabricated with InAlAs-InGaAs HBTs lattice matched to InP are reported. The switch achieves performance similar to that of a GaAs implementation but with half the power consumption. The insertion loss is 0.89 dB and the off-isolation is >35 dB at 10 GHz. The IP3 is 29.6 dBm and the total power consumption is 10.2 mW. Monolithic integration of PIN diodes with an InP-based HBT process provides monolithic switch functions for use in microwave and millimeter-wave communication systems.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; p-i-n diodes; semiconductor switches; 0.89 dB; 10 GHz; 10.2 mW; HBT; InAlAs-InGaAs-InP; PIN diode; SPDT; X-band switch; double-throw; low power consumption; microwave communication systems; millimeter-wave communication systems; monolithic switch functions; single-pole; Communication switching; Energy consumption; Gallium arsenide; Heterojunction bipolar transistors; Indium phosphide; Insertion loss; Lattices; Millimeter wave communication; Monolithic integrated circuits; Switches;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.242270

Filename

242270