Rhombus-like stripe BA InGaAs-AlGaAs-GaAs lasers

Author

Bo Baoxue ; Gao Xin ; Wang Ling ; Li Hui ; Qu Yi

Author_Institution

Changchun Univ. of Sci. & Technol., China

Volume

16

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

1248

Lastpage

1249

Abstract

A 1.5-W continuous-wave power output in a beam pattern of 3/spl deg/ is obtained from a new designed rhombus-like stripe strained quantum-well diode laser (/spl lambda/=980 nm) with a 150-μm-wide emission aperture grown by molecular beam epitaxy. The /spl eta//sub d/ is as high as 78%, and the maximum output power by the new stripe laser is 5.0 W for antireflection/high-reflection coated devices.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; indium compounds; laser beams; laser modes; molecular beam epitaxial growth; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 1.5 W; 1.5 mum; 5.0 W; 980 nm; InGaAs-AlGaAs-GaAs; InGaAs-AlGaAs-GaAs lasers; antireflection/high-reflection coated devices; broad area semiconductor lasers; contact stripe; continuous-wave power output; emission aperture; mode behavior; molecular beam epitaxy; rhombus-like stripe broad area lasers; strained quantum-well diode laser; stripe laser; Apertures; Diode lasers; Laser beams; Molecular beam applications; Molecular beam epitaxial growth; Molecular beams; Optical design; Power generation; Quantum well lasers; Time of arrival estimation;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.826114

Filename

1291473