Title :
Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm
Author :
Garcia, M. ; Salhi, A. ; Perona, A. ; Rouillard, Y. ; Sirtori, C. ; Marcadet, X. ; Alibert, C.
Author_Institution :
Thales Res. & Technol. France, Orsay, France
fDate :
5/1/2004 12:00:00 AM
Abstract :
Diode lasers emitting at 2.26 μm, based on the InGaAsSb-AlGaAsSb materials system, are reported. These devices exhibit high internal quantum efficiency of 78% and low threshold current density of 184.5 A/cm2 for a 2-mm-long cavity. Output power up to 700 mW (/spl ap/550 mW) has been obtained at 280 K (300 K) in continuous-wave operation with 100 μm×1 mm lasers. These devices have been coated with an antireflection on the output facet and are mounted epilayer down on a copper block. The working temperature was maintained by a thermoelectric Peltier cooling element.
Keywords :
III-V semiconductors; aluminium compounds; antireflection coatings; gallium compounds; indium compounds; laser cavity resonators; semiconductor lasers; 1 mm; 100 mum; 2 mm; 2.2 mum; 20 degC; 280 K; 300 K; 78 percent; InGaAsSb-AlGaAsSb; InGaAsSb-AlGaAsSb epilayer; antireflection coating; continuous-wave laser; copper block; diode laser; high-power operation; low-threshold operation; ohmic contacts; optical fabrication; quantum efficiency; room-temperature operation; semiconductor lasers; thermoelectric Peltier cooling element; threshold current density; Absorption; Atmosphere; Diode lasers; Etching; Gas lasers; Optical materials; Power generation; Resists; Semiconductor lasers; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.826053
