Title :
ZnSe-based mixed-color LEDs
Author :
Chen, Wen Ray ; Huang, Chien Jung
Author_Institution :
Dept. of Electr. Eng., Southern Taiwan Univ. of Technol., Tainan, Taiwan
fDate :
5/1/2004 12:00:00 AM
Abstract :
II-VI mixed-color light-emitting diodes (LEDs) were prepared by molecular beam epitaxy. At 20 K, it was found that we could achieve a near white light emission from sample 1O2B quantum well with a Commission Internationale de Enluminure index of x=0.4 and y=0.45. By carefully designing the device structure, we should be able to achieve a phosphor free white light LED by using the combinations of ZnCdSe and ZnCdSeTe wells.
Keywords :
II-VI semiconductors; light emitting diodes; molecular beam epitaxial growth; optical design techniques; optical materials; semiconductor growth; semiconductor quantum wells; visible spectra; wide band gap semiconductors; zinc compounds; 1O2B quantum well sample; 20 K; Commission Internationale de Enluminure index; II-VI mixed-color light-emitting diodes; ZnCdSe wells; ZnCdSeTe wells; ZnSe; ZnSe-based mixed-color LED; device structure design; molecular beam epitaxy; near white light emission; phosphor free white light LED; Displays; Gallium arsenide; LED lamps; Light emitting diodes; Luminescence; Molecular beam epitaxial growth; Phosphors; Substrates; Tellurium; Zinc compounds;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2004.826116
