ZnSe-based mixed-color LEDs

Author

Chen, Wen Ray ; Huang, Chien Jung

Author_Institution

Dept. of Electr. Eng., Southern Taiwan Univ. of Technol., Tainan, Taiwan

Volume

16

Issue

5

fYear

2004

fDate

5/1/2004 12:00:00 AM

Firstpage

1259

Lastpage

1261

Abstract

II-VI mixed-color light-emitting diodes (LEDs) were prepared by molecular beam epitaxy. At 20 K, it was found that we could achieve a near white light emission from sample 1O2B quantum well with a Commission Internationale de Enluminure index of x=0.4 and y=0.45. By carefully designing the device structure, we should be able to achieve a phosphor free white light LED by using the combinations of ZnCdSe and ZnCdSeTe wells.

Keywords

II-VI semiconductors; light emitting diodes; molecular beam epitaxial growth; optical design techniques; optical materials; semiconductor growth; semiconductor quantum wells; visible spectra; wide band gap semiconductors; zinc compounds; 1O2B quantum well sample; 20 K; Commission Internationale de Enluminure index; II-VI mixed-color light-emitting diodes; ZnCdSe wells; ZnCdSeTe wells; ZnSe; ZnSe-based mixed-color LED; device structure design; molecular beam epitaxy; near white light emission; phosphor free white light LED; Displays; Gallium arsenide; LED lamps; Light emitting diodes; Luminescence; Molecular beam epitaxial growth; Phosphors; Substrates; Tellurium; Zinc compounds;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2004.826116

Filename

1291477