Title :
C.W. operation of GaInAsP/InP laser with chemically etched mirror
Author :
Iga, Kenichi ; Miller, B.I.
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
The first c.w. operation of a GaInAsP/InP stripe laser (¿¿1.3 ¿m) having a chemically etched mirror has been achieved at room temperature. One of the cavity facets was monolithically formed by a wet chemical etch and passivated with a Si3N4 film to simplify bonding the chip on a heat sink. Threshold currents for 10 ¿m-stripe lasers were as low as 190 mA and the differential quantum efficiencies from the cleaved facet were ~18% (27°C, pulsed). C.W. operation was obtained up to 35°C.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; p-n heterojunctions; semiconductor junction lasers; CW operation; GaInAsP/InP laser; III-V semiconductor; Si3N4 film; cavity facets; chemically etched mirror; heat sink; passivation; wet chemical etch;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19800590
